Synopsys DesignWare® DDR2/DDR PHY IP are mixed-signal PHY IP Cores that supply the complete physical interface to JEDEC standard DDR2 and DDR SDRAM Memories. Used together with the DesignWare DDR2/DDR Digital Controller Cores and verification IP, the DDR2/DDR PHYs are the low risk, highest performance, and the only complete, fully validated DDR2/DDR IP solution on the market.The DesignWare DDR2/DDR PHYs are compiled into a hard macro that is optimized for specific foundry nodes. Each DDR2/DDR PHY is constructed from the following libraries of components: the application specific SSTL I/O library, a master and slave DLL library and Synopsys' unique Interface Timing Module (ITM) library composed of critical controller logic close to the I/Os. The ITMs facilitate the transition from double data rate to single data rate domains and eliminates timing closure issues between RTL-based Controller logic and the hard PHY IP. The DDR2/DDR PHY is assembled by direct cell abutment of the library components that eliminates the need for embedded clock distribution and critical signal timing matching.
The DDR2/DDR PHY supports an optional DFI 2.1 interface to the memory controller.DesignWare DDR2/DDR PHY Datasheet
When combined with a DesignWare DDR memory or protocol controller and verification IP, Synopsys provides a complete DDR2/DDR interface IP solution
Scalable architecture that supports the full JEDEC speed range, from DDR-250 up to DDR2-1066
Flexible, hardened macro approach: Three macro libraries are used to build the PHY, the application specific I/Os, Delay Locked Loops (DLLs) and Interface Timing Module (ITM) libraries
All cells connect by direct abutment resulting in a complete PHY without any routing required - allows maximum flexibility to configure and place according to user requirements (data width, chip constraints, etc.), while simultaneously taking all the diff
Optional DFI 2.1 interface
Uses only 4 layers of metal for ITM & DLL
Uses only 6 layers of metal for I/O cells
At-speed loopback test mode for production test
Low latency
Precision analog DLLs results in ultra low jitter
Master DLL component for SDRAM command generation and general host timing
Master/slave DLL component for SDRAM write data generation and read data capture
Immune to PVT variation
Uses core voltage level
Optional DDR signal integrity service is available to assist customers with the integration of the PHY into their SoC, package and printed circuit board environments
Real time DQS drift detection and compensation
Configurable external data bus widths between 8 and 64 bits in 8-bit increments plus ECC
Permits operating with DDR/DDR2 SDRAMs using data widths narrower than the compiled data width
Low area and low power architecture
Application specific DDR2/DDR I/O library featuring ODT and programmable drive strength (full, half drive) and includes power, analog, spacer, and corner cells.
Area optimized I/O
40um I/O pitch for 130nm and 90nm
35um I/O pitch for 65nm
Staggered I/O supported
Supports CUP (Circuit Under Pad) and (Bond Over Active)
Supports flip chip and wire bond (wire bond only in 130nm)
Optional DDR signal integrity service is available to assist customers with the integration of the PHY into their SoC, package and printed circuit board environments