This article will investigate EUV-specific issues and solution options for a production mask synthesis flow, including different correction and flow automation approaches. Improved methods help enable EUV optical proximity correction (OPC) tapeout flows to achieve comparable or better metrics than existing 193nm lithography flows.
Sep 09, 2011

At process nodes below 100 nanometers (nm), achieving yield ramp becomes both more critical and a greater challenge for semiconductor manufacturers. New manufacturing steps, materials and device types, coupled with escalating process variations and a host of other challenges, continually increase the difficulty in device scaling.
Oct 27, 2010

This article assess the readiness of rigorous physical resist model calibration for accurate EUV lithography (EUVL) simulation -- first, summarizing the experimental setup for the EUVL and discussing pattern selection for calibration, then illustrating the speed and robustness of model building, which allows overnight determination of accurate models.
Sep 13, 2010

Sagar Kekare of Synopsys discusses his paper on rapid root cause analysis and process change validation using design-centric volume diagnostics in a video interview with Debra Vogler of Solid State Technology.
Jul 14, 2010

In the race to the market, IC vendors have few avenues remaining to claim the first-to-market advantage.
Mar 12, 2009

It’s hard to imagine a set of applications that need computing resources more than the chain of EDA tools for a 65 nm chip design. (OK, searching for extraterrestrials, maybe, but the economics are a bit different there.)
Mar 10, 2008